Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor

ABSTRACT

A region is locally modified so as to create a zone that extends as far as at least part of the surface of the region and is formed from a material that can be removed selectively with respect to the material of the region. The region is then covered with an insulating material. An orifice is formed in the insulating material emerging at the surface of the zone. The selectively removable material is removed from the zone through the orifice so as to form a cavity in place of the zone. The cavity and the orifice are then filled with at least one electrically conducting material so as to form a contact pad.

PRIORITY CLAIM

This application is a divisional application of United StatesApplication for Patent Ser. No. 11/250,641 filed Oct. 14, 2005, whichclaims priority from French Application for Patent No. 04 11123 filedOct. 20, 2004, the disclosures of which are hereby incorporated byreference.

BACKGROUND

1. Technical Field

The present invention relates to integrated circuits, especially theirfabrication, and more particularly to the production of a contact pad ona region of an integrated circuit.

2. Description of Related Art

At the present time, a contact pad is generally produced on a region ofan integrated circuit, for example on the source, drain or gate regionof a transistor, or else on a polysilicon line forming a resistor, bysilicidation (i.e., the formation of a metal silicide) of the upper partof the region and then, after an insulating material, for examplesilicon dioxide, has been deposited on the region, by making an opening,commonly called a “via” by those skilled in the art, and filling the viawith a metal that will come into contact with the silicided zone. Thisvia will thus allow an electrical connection to be made between thesilicided semiconductor region and a metallization level of theintegrated circuit.

Such a process has many drawbacks. Among these, mention may for examplebe made of the complexity and the cost of production, but also theproblem of the resistance of the silicide layer and the problem of theinterface between the metal silicide and the silicon. This is because,if this interface is not correct this may result in a puncture of thejunctions, an increase in the resistance, or even debonding of the metalsilicide. The interface between the silicided zone and the metal thatfills the via must be perfectly controlled. It is therefore necessary toclean the bottom of a contact after opening the vias, so as to minimizethe risks of obtaining an interface of poor quality. Consequently, thisfurther increases the complexity and the production cost.

A need accordingly exists in the art to remedy these drawbacks. Aprocess for producing a contact pad that is radically different fromthat currently used in the prior art is needed.

There is further a need in the art for a process for producing a contactpad that is extremely simple to carry out, with a very good yield, whilein particular dispensing with the step carried out in the prior art ofcleaning the bottom of the contact.

There is still further a need in the art for a contact pad having a verylow resistance and in any case lower than that obtained in the prior artby silicidation.

There is also a need in the art to decrease the contact resistancewithout increasing the aperture of the via in order to maintain theintegration density of the interconnections.

SUMMARY

According to one aspect, what is proposed is a process for producing atleast one contact pad on the at least one region of an integratedcircuit, in which the region is locally modified so as to create a zonethat extends as far as at least part of the surface of the region, thiszone being formed from a material that can be removed selectively withrespect to the material of the region. The region is covered with aninsulating material and an orifice emerging at the surface of the zoneis formed in the insulating material. The selectively removable materialis removed from the zone through the orifice so as to form a cavityinstead of the zone. The cavity and the orifice are filled with at leastone electrically conducting material, for example a metallic material.Thus, for example, it is possible to obtain an entirely metallic contactpad on the region.

According to this aspect, what is thus provided is in particular thesimultaneous production, on the semiconductor region of the integratedcircuit, of a metallization and of the interconnection via forconnecting this metallization to a higher metallization level of theintegrated circuit. This is particularly simple to carry out, for littlecost. The yields are very good as there is a very large choice ofelectrically conducting materials and temperatures. In this regard, itis possible to envisage, without limitation, filling the cavity and theetching orifice with one and the same metal, but also with severalother, different metals or metallic compounds, or else with one or moremetal oxides, such as for example an indium oxide, such as that known bythose skilled in the art by the term ITO (Indium Tin Oxide).

Moreover, the problem of cleaning the bottom of the contact afteropening of the vias poses no problem here since, according to one methodof implementing, the removal of a layer of selectively removablematerial is provided, and therefore the interface thus obtained isvirtually perfect.

Moreover, the metallized layer located on the surface of the region onwhich the contact pad is made may have a very low resistance, and in anycase lower than that of a metal silicide.

Moreover, the thickness of this metallized layer can be perfectlydetermined and can be easily adjusted depending on the intendedapplication.

Furthermore, the metallization is carried out at an instant late in theprocess for fabricating the components on which it is necessary toproduce a metal contact. Consequently, the thermal budget is lower. Thesurface junctions may be produced over a very small depth because thethermal budget is low and because the metallization of the junction maybe carried out over a very small thickness.

Moreover according to a particularly advantageous embodiment, theaperture of the cavity is bigger than that of the orifice, which permitsto increase the area of the electrically conducting contact (i.e., thezone filled with the electrically conducting material) and consequentlyto decrease the contact resistance without increasing the dimensions ofthe via, i.e., those of the orifice. And this is possible because thedefinition of the location and the dimensions of the cavity is performedbefore the etching of the orifice and because the actual formation ofthe cavity is performed after said etching and through the etchedorifice.

This applies in particularly to contact pads on regions of activecomponents, such as transistors, or passive components, such asresistors, for example resistive lines made of polysilicon. This thusmakes it possible in particular to reduce the resistances for access toall kinds of devices, in particular bipolar transistors.

This may also apply to any element, whether passive or active, of anintegrated circuit on which it is necessary to have a contact pad.

The thickness of the zone resulting from the local modification of theregion may have any thickness, which a person skilled in the art willknow how to choose depending on the envisaged application. This beingthe case, it is particularly advantageous for the zone to be a very thinsurface zone, which is easily made possible by a method of implementingthe process. In this regard, the thickness of the surface zone is forexample less than 50 nm.

The material of the region on which it is desired to make the contactpad is for example a silicon-based material, for example single-crystalsilicon or polycrystalline silicon. In this case, the selectivelyremovable material may be a silicon-germanium alloy.

For example, the zone is formed by the implantation of dopants, forexample by implantation of germanium, it being possible, for example,for this implantation to be localized by masking with a resist, or elseto be self-aligned with respect to a pre-existing feature of anintegrated circuit. It would also be possible in certain cases toimplant oxygen or nitrogen.

The orifice may be formed in the insulating material by chemical orplasma etching.

According to one method of implementation, the material is removed fromthe zone by selective etching.

In certain cases, the entire surface of the region may be metallized. Inother words, according to such a method of implementation, the zoneextends over the entire surface of the region. The region may be asource, drain or gate region of a field-effect transistor, or anemitter, collector or base region of a bipolar transistor. When theforegoing is applied to the fabrication of an MOS transistor, thisfabrication comprises, according to one method of implementation: a) theformation of the gate, source and drain regions of the transistor; andb) the simultaneous production of the respective metal contact pads onthe source and drain regions as defined above. The insulating material,in which the orifices emerging in the source and drain regions areformed, then covers the structure obtained in step a).

Thus, it is possible to obtain, according to one method of implementing,metallizations that are self-aligned with respect to the source anddrain regions of the MOS transistor and to do so without any problem ofshort-circuiting the subjacent junctions.

It is also possible to produce the metallization and the metal contactpad on the gate region simultaneously.

Thus, in the case of an MOS transistor for example, it is noteworthythat the source, drain and gate metallizations and the vias thatinterconnect these metallizations to the upper metallization level ofthe integrated circuit are produced simultaneously and in a self-alignedmanner.

Another aspect is an integrated circuit comprising at least one regionequipped with an entirely metallic contact pad obtained by the processas defined above.

This region may form part of a passive or active component.

This component may thus be a resistor formed from a polysilicon line orelse a transistor obtained by a fabrication process as defined above.

In accordance with an embodiment, an integrated circuit comprises asilicon-based region on the surface of which was formed and removed asacrificial alloyed silicon region so to define a cavity. An insulatinglayer overlies the silicon-based region, the insulating layer includingan opening therein aligned with the cavity on the surface of thesilicon-based region. A metallic material fills both the opening in theinsulating layer and the cavity on the surface of the silicon-basedregion so as to form a contact pad with that silicon-based region.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete understanding of the method and apparatus of the presentinvention may be acquired by reference to the following DetailedDescription when taken in conjunction with the accompanying Drawingswherein:

FIGS. 1 to 10 illustrate schematically the main steps of one method ofimplementing the process according to an embodiment;

FIG. 11 shows schematically a transistor obtained by such a method ofimplementation, within an integrated circuit; and

FIG. 12 illustrates schematically another component of an integratedcircuit equipped with a contact pad according to one embodiment.

DETAILED DESCRIPTION OF THE DRAWINGS

The main steps of one method of implementing the process will now bedescribed in greater detail.

In FIG. 1, an active zone 1 is formed between two isolation zones 2 on asubstrate SB, for example a silicon substrate, it being possible for theisolation zones to be isolation trenches. These isolation trenches mayfor example be deep trenches of the DTI (Deep Trench Isolation) type orshallow trenches of the STI (Shallow Trench Isolation) type.

An initial gate region 4, which may also be made of polysilicon, isproduced by means known per se on the active region 1.

Next, the source and drain regions are produced (FIG. 2). These areproduced, for example, by carrying out two implantations 40 of dopantsrespectively before and after the formation of spacers 3 surrounding thegate. The nature of the dopants is chosen depending on whether thetransistor on the circuit IC is of the n type or p type. Since theinitial gate 4 acts as a mask for the ion implantations, source anddrain regions that are self-aligned with the initial gate region 4 andwith the active zone 1 bounded by the isolation regions 2 are obtained.

Dopants are also implanted into the gate.

These various implantations make it possible to produce, as illustratedin FIGURE 3, a diffused source region 51, a diffused drain region 61 anda diffused gate region 41. Of course, it should also be noted that thegate of the transistor is in this case an isolated gate, separated fromthe substrate 1 by a gate oxide, this oxide not being shown for thepurpose of simplification.

For example, a germanium implantation 400 is then carried out in theintegrated circuit IC (FIG. 4). This is accordingly a “full sheet”implantation. It will be recognized that a localized implantation of thedopant could alternatively be provided.

As illustrated in FIG. 5, the energy of this implantation 400 is chosenso as to form surface zones 410, 510 and 610 in the respective regions41, 51 and 61. These surface zones 410, 510 and 610 are then formed froma material that can be selectively removed with respect to the siliconforming the regions 41, 51 and 61. More precisely, in the present case,these zones 410, 510 and 610 are formed from a silicon-germanium alloySiGe.

An annealing step may furthermore be carried out so as to recrystallizethe materials and thus better define the boundaries between the materialforming the regions 51, 61 and 41 and the selectively removable materialin the source zones 510, 610 and 410. This annealing may for example becarried out at a temperature of 800 to 900° C.

The surface of the circuit is then covered by known means with a layerof an insulating material 7, the layer 7 consisting for example ofsilicon dioxide (FIG. 6). This layer 7 is surmounted by a resist layer 8(FIG. 7), also obtained by known means, in which orifices 9, that willform the position 9 of the future connection vias, are formed in a knownmanner.

Next, the insulating material 7 is anisotropically etched through theorifices 9 in the resist mask so as to obtain etching orifices 90 thatextend down to the source zone 510, the drain zone 610 and the gate zone410 (FIG. 8).

It is through the orifices 90 that the selectively removable material,present in the zones 510, 610 and 410, is selectively removed (FIG. 9)in order to obtain cavities 520, 620 and 420 surmounting the diffusedsource region 52, drain region 62 and gate region 42.

It is noted here that the dimension of the cavities is greater than theaperture of the orifice.

This selective removal may be carried out by any known means, forexample by means of an oxidizing chemical agent such as a solutioncomprising 40 ml of 70% HNO₃+20 ml of H₂O₂+5 ml of 0.5% HF, or byisotropic plasma etching.

Next, one or more electrically conducting materials are deposited byknown methods, allowing the previously obtained cavities to besimultaneously filled (FIG. 10) in order to obtain the source region 52,the drain region 62 and the gate region 42, these regions beingsurmounted by electrically conducting zones, for example metallizations53, 63 and 43 and connection vias 91, which are also electricallyconducting, between these metallizations and the surface of theintegrated circuit.

Since the aperture of the cavities is greater than that of the orifices,the areas of the metallizations 43, 53, 63 are greater than the viasaperture. This permits a decrease in the contact resistance withoutincreasing the lateral dimensions of the vias, which permits one tomaintain the integration density of the interconnections.

In this regard, the cavities 420, 520, 620 and the etching orifices 90may be filled with tungsten (W), for example by chemical vapordeposition (CVD) known per se, for example within the 500° C. to 600° C.temperature range, or else by ALD (Atomic Layer Deposition), also knownper se, for example within the 200° C. to 300° C. temperature range.

It is also possible to use copper (Cu), cobalt (Co) or nickel (Ni) byelectrochemical deposition at room temperature. In particular in thecase of copper, this is preferably deposited prior to a barrier layer,for example made of titanium nitride (TiN), by chemical vapordeposition, or made of tantalum (Ta).

It is also possible to use tantalum nitride (TaN) by ALD-typedeposition, for example within the 200° C. to 300° C. temperature range.

It is also possible to use highly doped polysilicon by LPCVD(low-pressure CVD) in a furnace, for example at between 700° C. and 800°C., or else ALD-type deposition, for example within the 200° C. to 300°C. temperature range.

It is also possible to use a metal compound comprising aluminum (Al) anda small percentage, for example 5%, of silicon.

It is also possible to use metal oxides, such as for example an indiumoxide, such as the one known by the name ITO (Indium Tin Oxide).

The excess metal is removed for example by chemical-mechanicalpolishing, and a metallization level M0 is produced, by known means, inorder to obtain the integrated circuit of FIG. 11.

FIG. 11 therefore shows an integrated circuit IC comprising a transistoraccording to one embodiment.

The integrated circuit comprises a substrate SB in which the activezones 1 have been produced between the isolation zones 2 of thesubstrate. A transistor T has been produced in and on the active zone 1of the substrate SB. The electrodes (source 52, drain 62 and gate 42) ofthe transistor are covered with electrically conducting contact pads,these being for example entirely metallic and formed from surfacemetallizations 52, 63 and 43 and from metal vias 91 connected to themetallization level M0.

The invention is not limited to the production of self-aligned contactpads on a transistor, rather it applies to any passive or activecomponent of an integrated circuit on which it is necessary to make acontact pad, whether or not self-aligned. By way of indication, FIG. 12illustrates schematically a polysilicon line 75, forming a resistor, onwhich an entirely metallic contact pad is produced, for example inaccordance with the method of implementation described above.

More precisely, this polysilicon resistive line 75, resting for exampleon a subjacent insulating material 70, is provided locally with anentirely metallic contact pad. This contact pad comprises, as explainedabove, a metallic surface zone 750 and a metallic interconnection via 91made within an upper insulating material 7. The via 91 makes it possibleto electrically connect the metallization 750 for the resistor 75 to theupper metallization level Mi of the integrated circuit. The metallicsurface zone is obtained using the above method of implementation, forexample by germanium implantation localized by a resist mask.

Although preferred embodiments of the method and apparatus of thepresent invention have been illustrated in the accompanying Drawings anddescribed in the foregoing Detailed Description, it will be understoodthat the invention is not limited to the embodiments disclosed, but iscapable of numerous rearrangements, modifications and substitutionswithout departing from the spirit of the invention as set forth anddefined by the following claims.

1. An integrated circuit, comprising: a silicon-based region on thesurface of which was formed and removed a sacrificial alloyed siliconregion so to define a cavity; a insulating layer overlying thesilicon-based region, the insulating layer including an opening thereinaligned with the cavity on the surface of the silicon-based region; anda metallic material that fills both the opening in the insulating layerand the cavity on the surface of the silicon-based region so as to forma contact pad with that silicon-based region.
 2. The circuit accordingto claim 1, wherein the silicon-based region forms part of a passive oractive component.
 3. The circuit according to claim 1, whereinsilicon-based region is a portion of a polysilicon line.
 4. The circuitaccording to claim 1, wherein silicon-based region is a portion of atransistor.
 5. The circuit according to claim 4, wherein the portion isone of a source or drain of the transistor.
 6. The circuit according toclaim 1, wherein an aperture of the cavity is larger than an aperture ofthe opening.
 7. An integrated circuit, comprising: a silicon-basedregion on the surface of which was formed a sacrificial alloyed siliconregion so to define a location for a cavity; a insulating layeroverlying the silicon-based region, the insulating layer including anopening therein aligned with the location on the surface of thesilicon-based region and through which the sacrificial alloyed siliconregion was removed to form the cavity; and a metallic material thatfills both the opening in the insulating layer and the cavity on thesurface of the silicon-based region so as to form a contact pad withthat silicon-based region.
 8. The circuit according to claim 7, whereinthe silicon-based region forms part of a passive or active component. 9.The circuit according to claim 7, wherein silicon-based region is aportion of a polysilicon line and the metallic material form the contactpad to the polysilicon line.
 10. The circuit according to claim 7,wherein silicon-based region is a portion of a transistor and themetallic material form the contact pad to the portion of the transistor.11. The circuit according to claim 10, wherein the portion is one of asource or drain of the transistor.
 12. The circuit according to claim 7,wherein an aperture of the cavity is larger than an aperture of theopening.
 13. Apparatus, comprising: a conductive substrate including asource or drain region for an integrated circuit transistor; aninsulating material covering the conductive substrate region andincluding an orifice in the insulating material above the source ordrain region of the conductive substrate; wherein the conductivesubstrate further includes a cavity formed below the orifice in theinsulating material, the cavity being within the source or drain regionof the conductive substrate; and at least one electrically conductingmaterial filling the cavity in the conductive substrate and the orificein the insulating material to form a source or drain contact.
 14. Theapparatus according to claim 13, wherein the cavity is a substratesurface cavity having a thickness of less than 50 nm.
 15. The apparatusaccording to claim 13, wherein the material of the source or drainregion is a silicon-based material, such as single-crystal silicon orpolycrystalline silicon.
 16. The apparatus according to claim 14,wherein an aperture of the cavity is larger than an aperture of theorifice.
 17. Apparatus, comprising: a conductive substrate including anemitter, base or collector region for an integrated circuit transistor;an insulating material covering the conductive substrate region andincluding an orifice in the insulating material above the emitter, baseor collector region of the conductive substrate; wherein the conductivesubstrate further includes a cavity formed below the orifice in theinsulating material, the cavity being within the emitter, base orcollector region of the conductive substrate; and at least oneelectrically conducting material filling the cavity in the conductivesubstrate and the orifice in the insulating material to form an emitter,base or collector contact.
 18. The apparatus according to claim 17,wherein the cavity is a substrate surface cavity having a thickness ofless than 50 nm.
 19. The apparatus according to claim 17, wherein thematerial of the emitter, base or collector region is a silicon-basedmaterial, such as single-crystal silicon or polycrystalline silicon. 20.The apparatus according to claim 17, wherein an aperture of the cavityis larger than an aperture of the orifice.
 21. Apparatus, comprising: afirst insulating layer; a polysilicon conductive line extending over thefirst insulating layer; a second insulating layer over the polysiliconconductive line and including an orifice in the second insulating layerabove the polysilicon conductive line; wherein the polysiliconconductive line further includes a cavity formed below the orifice inthe second insulating layer; and at least one electrically conductingmaterial filling the cavity in the polysilicon conductive line and theorifice in the insulating material.
 22. The apparatus according to claim21, wherein the cavity is a polysilicon conductive line surface cavityhaving a thickness of less than 50 nm.
 23. The apparatus according toclaim 21, wherein the polysilicon conductive line is a gate of a MOStransistor and the electrically conducting material forms a gatecontact.
 24. The apparatus according to claim 21, wherein thepolysilicon conductive line is a resistor and the electricallyconducting material forms a contact to one end of the resistor.
 25. Theapparatus according to claim 21, wherein an aperture of the cavity islarger than an aperture of the orifice.